Abstract Site-controlled InAs nano dots were successfully fabricated by a STMBE system (in situ scanning tunneling microscopy during molecular beam epitaxy growth) at substrate temperatures from 50 to 430°C. After 1. 5 ML of the InAs wetting layer (WL) growth by ordinal Stranski–Krastanov dot fabrication procedures. we applied voltage at particular sites on the InAs WL. https://www.roneverhart.com/SERPENT-CARBON/